| PART |
Description |
Maker |
| KM44C256D KM44C256D-6 KM44C256D-7 KM44C256D-8 |
256k x 4Bit CMOS DRAM with Fast Page Mode
256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode 256 × 4位CMOS动态随机存储器的快速页面模
|
Samsung Electronics
Samsung Semiconductor Co., Ltd.
|
| MB814400C-60 MB814400C-70 |
CMOS 1 M ×4BIT
Fast Page Mode DRAM(CMOS 1 M ×4 位快速页面存取模式动态RAM)
CMOS 1 M ×4 BIT
Fast Page Mode DRAM(CMOS 1 M ×4 位快速页面存取模式动态RAM)
|
Fujitsu Limited
|
| MB81V16160A-60 MB81V16160A-60L |
CMOS 1 M ×16 BIT
Fast Page Mode DRAM(CMOS 1 M ×16位快速页面存取模式动态RAM)
|
Fujitsu Limited
|
| IDT74FCT533A IDT74FCT533C IDT74FCT533 IDT74FCT533A |
FAST CMOS OCTAL TRANSPARENT LATCHES 快速CMOS八路透明锁存
FAST CMOS OCTAL TRANSPARENT LATCHES FCT SERIES, 8-BIT DRIVER, INVERTED OUTPUT, CDIP20
RECTIFIER FAST-RECOVERY SINGLE 3A 400V 125A-ifsm 1.3V-vf 250ns 5uA-ir DO-201AD 1.2K/REEL-13 快速CMOS八路透明锁存
RECTIFIER FAST-RECOVERY SINGLE 3A 400V 125A-ifsm 1.3V-vf 250ns 5uA-ir DO-201AD 500/BULK
|
Integrated Device Techn...
Integrated Device Technolog...
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| MB8116160A-70 |
CMOS 1 M ×16 BIT
Fast Page Mode DRAM(CMOS 1 M ×16 位快速页面存取模式动态RAM)
CMOS 1 M ?16 BIT Fast Page Mode DRAM(CMOS 1 M ?16 浣?揩??〉?㈠???ā寮????AM)
|
Fujitsu Limited
|
| K4F160412D K4F160411D-BL50 |
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode 4米4位的CMOS动态随机存储器的快速页面模
4M X 4 FAST PAGE DRAM, 50 ns, PDSO24
|
Samsung Semiconductor Co., Ltd.
|
| IDT74FCT646AT IDT54FCT646AT 74FCT646T_DS_37501 IDT |
FAST CMOS OCTAL TRANSCEIVER/REGISTER (3-STATE)
From old datasheet system
FAST CMOS OCTAL TRANSCEIVER/ REGISTER (3-STATE)
|
Integrated Device Techn...
IDT
Integrated Device Technology
|
| IDT54FCT2374ATQ IDT54FCT2374ATQB IDT74FCT2374ATQ I |
Fast CMOS octal D register (3-state)
CAP 0.039UF 100V 10% X7R SMD-1206 TR-7-PL SN-NIBAR 快速CMOS八路D寄存器（3态）
FAST CMOS OCTAL D REGISTERS (3-STATE) 快速CMOS八路D寄存器（3态）
CAP 1UF 16V 5% Y5V SMD-0805 TR-7-PL SN-NIBAR FCT SERIES, 8-BIT DRIVER, TRUE OUTPUT, PDSO20
CAP 0.47UF 200V 20% X7R SMD-2225 TR-7-PL SN-NIBAR
|
INTEGRATED DEVICE TECHNOLOGY INC
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| K4F160411D K4F160412D K4F170411D K4F170412D K4F160 |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KM41C4000DLJ-6 KM41V4000DLJ-6 KM41V4000DLJ-7 KM41C |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 60ns
4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 128ms refresh, 60ns
4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 128ms refresh, 70ns
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 50ns
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 70ns
|
Samsung Electronic
|
| KM416C4000B KM416C4100B KM416C4000BS-6 KM416C4000B |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 60ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
